PESD5V2S2UT 

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Thank you for your cooperation and understanding, Kind regards, Team Nexperia DISCRETE SEMICONDUCTORS DATA SHEET PESDxS2UT series Double ESD protection diodes in SOT23 package Product data sheet Supersedes data of 2003 Aug 20 2004 Apr 15 NXP Semiconductors Product data sheet Double ESD protection diodes in SOT23 package FEATURES PESDxS2UT series QUICK REFERENCE DATA • Uni-directional ESD protection of up to two lines SYMBOL • Max. peak pulse power: Ppp = 330 W at tp = 8/20 µs VRWM reverse stand-off voltage 3.3, 5.2, 12, 15 and 24 Cd diode capacitance VR = 0 V; f = 1 MHz 207, 152, 38, 32 pF and 23 number of protected lines 2 • Low clamping voltage: V(CL)R = 20 V at Ipp = 18 A • Ultra-low reverse leakage current: IRM < 700 nA • ESD protection > 23 kV • IEC 61000-4-2; level 4 (ESD) • IEC 61000-4-5 (surge); Ipp = 18 A at tp = 8/20 µs. APPLICATIONS PARAMETER VALUE UNIT V PINNING • Computers and peripherals PIN • Communication systems • Audio and video equipment • High speed data lines • Parallel ports. DESCRIPTION 1 cathode 1 2 cathode 2 3 common anode DESCRIPTION Uni-directional double ESD protection diodes in a SOT23 plastic package. Designed to protect up to two transmission or data lines from ElectroStatic Discharge (ESD) damage. 1 3 3 MARKING TYPE NUMBER 2 2 MARKING CODE(1) PESD3V3S2UT *U9 PESD5V2S2UT *U1 PESD12VS2UT *U2 PESD15VS2UT *U3 PESD24VS2UT *U4 sym022 001aaa490 Fig.1 Simplified outline (SOT23) and symbol. Note 1. * = p : made in Hong Kong. * = t : made in Malaysia. * = W : made in China. 2004 Apr 15 1 2 NXP Semiconductors Product data sheet Double ESD protection diodes in SOT23 package PESDxS2UT series ORDERING INFORMATION PACKAGE TYPE NUMBER NAME PESD3V3S2UT − DESCRIPTION VERSION plastic surface mounted package; 3 leads SOT23 PESD5V2S2UT PESD12VS2UT PESD15VS2UT PESD24VS2UT LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 60134). SYMBOL Ppp Ipp PARAMETER peak pulse power CONDITIONS MIN. MAX. UNIT 8/20 µs pulse; notes 1 and 2 PESD3V3S2UT − 330 W PESD5V2S2UT − 260 W PESD12VS2UT − 180 W PESD15VS2UT − 160 W PESD24VS2UT − 160 W PESD3V3S2UT − 18 A PESD5V2S2UT − 15 A PESD12VS2UT − 5 A PESD15VS2UT − 5 A peak pulse current 8/20 µs pulse; notes 1 and 2 PESD24VS2UT − 3 A Tj junction temperature − 150 °C Tamb operating ambient temperature −65 +150 °C Tstg storage temperature −65 +150 °C Notes 1. Non-repetitive current pulse 8/20µ µs exponential decay waveform; see Fig.2. 2. Measured across either pins 1 and 3 or pins 2 and 3. 2004 Apr 15 3 NXP Semiconductors Product data sheet Double ESD protection diodes in SOT23 package PESDxS2UT series ESD maximum ratings SYMBOL ESD PARAMETER CONDITIONS electrostatic discharge capability VALUE UNIT PESD3V3S2UT 30 kV PESD5V2S2UT 30 kV PESD12VS2UT 30 kV PESD15VS2UT 30 kV PESD24VS2UT 23 kV 10 kV IEC 61000-4-2 (contact discharge); notes 1 and 2 HBM MIL-Std 883 PESDxS2UT series Notes 1. Device stressed with ten non-repetitive ElectroStatic Discharge (ESD) pulses; see Fig.3. 2. Measured across either pins 1 and 3 or pins 2 and 3. ESD standards compliance ESD STANDARD CONDITIONS IEC 61000-4-2; level 4 (ESD); see Fig.3 >15 kV (air); > 8 kV (contact) HBM MIL-Std 883; class 3 >4 kV 001aaa191 MLE218 120 Ipp handbook, halfpage 100 % Ipp 100 % Ipp; 8 µs (%) 80 90 % e−t 50 % Ipp; 20 µs 40 10 % tr = 0.7 to 1 ns 0 0 10 20 30 t (µs) 40 30 ns 60 ns Fig.2 8/20 µs pulse waveform according to IEC 61000-4-5. 2004 Apr 15 Fig.3 4 ElectroStatic Discharge (ESD) pulse waveform according to IEC 61000-4-2. t NXP Semiconductors Product data sheet Double ESD protection diodes in SOT23 package PESDxS2UT series ELECTRICAL CHARACTERISTICS Tj = 25 °C unless otherwise specified. SYMBOL VRWM IRM VBR Cd V(CL)R PARAMETER MIN. TYP. MAX. UNIT reverse stand-off voltage PESD3V3S2UT − − 3.3 V PESD5V2S2UT − − 5.2 V PESD12VS2UT − − 12 V PESD15VS2UT − − 15 V PESD24VS2UT − − 24 V reverse leakage current PESD3V3S2UT VRWM = 3.3 V − 0.7 2 µA PESD5V2S2UT VRWM = 5.2 V − 0.15 1 µA PESD12VS2UT VRWM = 12 V −